IRF7105PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 1.0A
N-Ch 25
P-Ch -25
0.030
-0.015
0.083 0.10
0.14 0.16
0.16 0.25
0.30 0.40
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
N-Ch
P-Ch
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
N-Ch
P-Ch
VGS = 4.5V, ID = 0.50A
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
V
GS = -10V, ID = -1.0A
VGS = -4.5V, ID = -0.50A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 3.5A
VDS = -15V, ID = -3.5A
VDS = 20V, VGS = 0V
VDS = -20V, VGS = 0V,
VDS = 20V, VGS = 0V, TJ = 55°C
VDS = -20V, VGS = 0V, TJ = 55°C
VGS = ± 20V
N-Ch 1.0
P-Ch -1.0
4.3
3.1
3.0
-3.0
VGS(th)
gfs
Gate Threshold Voltage
V
S
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
ForwardTransconductance
2.0
-2.0
25
-25
±100
IDSS
Drain-to-Source Leakage Current
µA
IGSS
Qg
Gate-to-SourceForwardLeakage
TotalGateCharge
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
9.4 27
N-Channel
ID = 2.3A, VDS = 12.5V, VGS = 10V
10
25
1.7
1.9
3.1
2.8
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
Rise Time
nC
P-Channel
ID = -2.3A, VDS = -12.5V, VGS = -10V
7.0 20
12 40
9.0 20
N-Channel
VDD = 25V, ID = 1.0A, RG = 6.0Ω,
RD = 25Ω
13
45
45
25
37
4.0
6.0
330
290
250
210
61
40
90
90
50
50
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
P-Channel
VDD = -25V, ID = -1.0A, RG = 6.0Ω,
RD = 25Ω
LD
LS
Internal Drain Inductace
Internal Source Inductance
Between lead , 6mm (0.25in.)from
package and center of die contact
nH
pF
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Ciss
Coss
Crss
Input Capacitance
N-Channel
VGS = 0V, VDS = 15V, = 1.0MHz
Output Capacitance
P-Channel
VGS = 0V, VDS = -15V, = 1.0MHz
Reverse Transfer Capacitance
67
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
36
69 100
41 75
90 180
2.0
-2.0
14
-9.2
1.2
-1.2
54
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
A
ISM
VSD
trr
TJ = 25°C, IS = 1.3A, VGS = 0V
TJ = 25°C, IS = -1.3A, VGS = 0V
V
N-Channel
ns
nC
Reverse Recovery Time
TJ = 25°C, IF = 1.3A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.3A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Forward Turn-On Time
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
ton
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
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