IRF7105PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
N-CH
25
0.1
9.4
3.5
P-CH
-25
0.25
10
-2.3
S1
N-CHANNEL MOSFET
1
8
2
3
4
7
6
5
D1
D1
D2
D2
V
Ω
nC
A
G1
S2
G2
Q
g (typical)
I
D
(@T
A
= 25°C)
P-CHANNEL MOSFET
Top View
SO-8
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7105PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7105PbF-1
IRF7105TRPbF-1
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
3.5
2.8
14
2.0
0.016
± 20
3.0
-55 to + 150
-3.0
P-Channel
-2.3
-1.8
-10
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
R
θJA
Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max.
62.5
Units
°C/W
1
©
2013 International Rectifier
November 14, 2013
IRF [ INTERNATIONAL RECTIFIER ]
