IRF7101
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
20
–––
–––
–––
1.0
1.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.025
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
10
24
30
4.0
6.0
320
250
75
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.10
V
GS
= 10V, I
D
= 1.8A
Ω
0.15
V
GS
= 4.5V, I
D
= 1.0A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 15V, I
D
= 3.5A
2.0
V
DS
= 20V, V
GS
= 0V
µA
250
V
DS
= 16V, V
GS
= 0V, T
J
= 125 °C
100
V
GS
= 12V
nA
-100
V
GS
= - 12V
15
I
D
= 1.8A
2.0
nC V
DS
= 16V
3.6
V
GS
= 10V
–––
V
DD
= 10V
–––
I
D
= 1.8A
ns
–––
R
G
= 8.2Ω
–––
R
D
= 26Ω
D
–––
nH
–––
–––
–––
–––
pF
Between lead,6mm(0.25in.)
from package and center
of die contact
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 2.0
showing the
A
G
integral reverse
––– ––– 14
p-n junction diode.
S
––– ––– 1.2
V
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
––– 36
54
ns
T
J
= 25°C, I
F
= 1.7A
––– 41
62
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
3.5A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Surface mounted on FR-4 board, t
≤
10sec.
IRF [ INTERNATIONAL RECTIFIER ]
