®
IRF630
IRF630FP
N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP
MESH OVERLAY™ MOSFET
TYPE
IRF630
IRF630F P
s
s
s
s
V
DSS
200 V
200 V
R
DS(on)
< 0.40
Ω
< 0.40
Ω
I
D
9 A
9 A
TYPICAL R
DS(on)
= 0.35
Ω
EXTREMELY HIGH dV/dt CAPABILITY
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
2
1
2
3
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY
™
process. This technology matches
and improves the performances compared with
standard parts from various sources.
TO-220
TO-220FP
APPLICATIONS
s
HIGH CURRENT SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt(
1
)
V
ISO
T
s tg
T
j
Parameter
IRF630
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
Ω
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Value
IRF630F P
200
200
±
20
9
5.7
36
75
0.6
5
-65 to 150
150
9(**)
5.7(**)
36
25
0.20
5
2000
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
V
o
o
C
C
(
•
) Pulse width limited by safe operating area
(
1
) I
SD
≤
9A, di/dt
≤
300 A/
µ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed
February 1999
1/9