IRF5305
2500
20
16
12
8
V
C
C
= 0V ,
f = 1M Hz
I
= -16A
D
G S
iss
= C
= C
= C
+ C
+ C
,
C
SHORTE D
gs
gd
ds
gd
ds
V
V
= -44V
= -28V
D S
D S
rss
oss
C
gd
2000
C
C
iss
oss
1500
1000
500
0
C
rss
4
FOR TE ST CIRCUIT
S EE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
50
60
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
100µs
T
= 175°C
J
1m s
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
S ingle Pulse
C
J
V
= 0V
G S
A
1
A
0.4
0.8
1.2
1.6
2.0
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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