IRF4905
7000
20
16
12
8
I
= -38A
V
C
C
C
= 0V,
f = 1M Hz
GS
iss
D
= C
= C
= C
+ C
+ C
,
C
ds
SHORTE D
gs
gd
ds
gd
6000
5000
4000
3000
2000
1000
0
rss
o ss
V
V
= -44V
= -28V
DS
DS
g d
C
is s
C
C
o ss
rs s
4
FOR TE ST CIRCUIT
SE E FIGURE 13
0
A
A
1
10
100
0
40
80
120
160
200
-VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1 0 0 0
1 0 0
1 0
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
T
= 175°C
100µs
J
T
= 25°C
J
1m s
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
GS
Single Pulse
1
A
1
A
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
1. 6
1. 8
1
10
100
-V
, Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
INFINEON [ Infineon ]
