IRF4905PbF
20
16
12
8
7000
I
= -38A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
= C
gd
6000
5000
4000
3000
2000
1000
0
V
= -44V
= -28V
DS
= C + C
ds
gd
V
DS
C
iss
C
oss
rss
C
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
200
A
1
10
100
0
40
80
120
160
-V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 175°C
J
100µs
T = 25°C
J
1ms
10ms
T
T
J
= 25°C
= 175°C
C
V
= 0V
GS
Single Pulse
A
1
1
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
INFINEON [ Infineon ]
