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IRF460 参数 Datasheet PDF下载

IRF460图片预览
型号: IRF460
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管N沟道( VDSS = 500V , RDS(ON) = 0.27ohm , n = 21 ) [TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 7 页 / 143 K
品牌: INFINEON [ Infineon ]
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IRF460  
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source Breakdown Voltage  
500  
V
V
= 0V, I = 1.0mA  
D
GS  
Reference to 25°C, I = 1.0mA  
BV  
/T  
Temperature Coefficient of Breakdown  
Voltage  
0.78  
V/°C  
DSS  
J
D
R
Static Drain-to-Source On-State  
Resistance  
0.27  
0.31  
4.0  
V
= 10V, I = 14A ➀  
= 10V, I =21A ➀  
D
DS(on)  
GS D  
V
GS  
V
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
2.0  
13  
V
V
= V , I =250µA  
GS(th)  
fs  
DS  
GS  
D
g
S ( )  
V
> 15V, I  
= 14A ➀  
DS  
V
DS  
I
25  
=400V,V =0V  
DS GS  
DSS  
µA  
250  
V
=400V  
DS  
= 0V, T = 125°C  
V
GS  
J
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
84  
12  
60  
6.1  
100  
-100  
190  
27  
V
= 20V  
GSS  
GS  
nA  
nC  
I
V
GS  
= -20V  
GSS  
Q
V
= 10V, ID 21A  
GS =  
g
Q
Q
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
V
DS  
= 250V  
gs  
135  
35  
gd  
d(on)  
r
t
t
V
DD  
=250V, I =21A,  
D
120  
130  
98  
R
G
=2.35Ω  
n s  
t
Turn-Off Delay Time  
Fall Time  
d(off)  
t
f
L
L
Total Inductance  
nH  
S +  
D
Measured from drain lead (6mm/0.25in. from  
package) to source lead (6mm/0.25in. from  
package)  
C
C
C
Input Capacitance  
4300  
1000  
250  
V
= 0V, V  
= 25V  
f = 1.0MHz  
iss  
GS DS  
Output Capacitance  
pF  
oss  
rss  
Reverse Transfer Capacitance  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
Continuous Source Current (Body Diode)  
21  
84  
S
A
I
Pulse Source Current (Body Diode) ➀  
SM  
V
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
1.8  
580  
8.1  
V
nS  
µC  
T = 25°C, I = 21A, V  
= 0V ➀  
j
SD  
S
GS  
t
T = 25°C, I = 21A, di/dt 100A/µs  
j
rr  
F
Q
RR  
V
50V ➀  
DD  
t
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
R
Junction to Case  
0.42  
30  
thJC  
thJA  
°C/W  
Junction to Ambient  
Typical socket mount  
For footnotes refer to the last page  
2
www.irf.com  
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