IRF3710
12
10
7
100000
10000
1000
D
I
= 28A
V
= 0V,
f = 1 MHZ
GS
V
V
V
=
=
=
80V
50V
20V
DS
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
ds gd
oss
Ciss
Coss
5
Crss
100
2
10
1
0
0
20
Q
40
60
80
100
10
, Drain-to-Source Voltage (V)
100
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.00
10.00
1.00
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.10
0.1
0.0
0.5
1.0
1.5
2.0
1
10
100
1000
V
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
INFINEON [ Infineon ]
