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IRF3710PBF 参数 Datasheet PDF下载

IRF3710PBF图片预览
型号: IRF3710PBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET [HEXFET Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲PC局域网
文件页数/大小: 8 页 / 185 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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IRF3710PbF
1000
VGS
TOP
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
TOP
10
10
3.5V
1
3.5V
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
3.0
I
D
= 57A
ID, Drain-to-Source Current
)
2.5
T J = 175°C
10.00
R
DS(on)
, Drain-to-Source On Resistance
100.00
2.0
(Normalized)
1.5
T J = 25°C
1.00
1.0
0.10
3.0
4.0
5.0
VDS = 15V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3