IR2153(D)(S)& (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Electrical Characteristics
V
(V , V ) = 12V, C = 1000 pF, C = 1 nF and T = 25°C unless otherwise specified. The V , V and I
BIAS CC BS L T A IN TH IN
parameters are referenced to COM. The V and I parameters are referenced to COM and are applicable to the
O
O
respective output leads: HO or LO.
Low Voltage Supply Characteristics
Symbol Definition
Min. Typ.
Max. Units Test Conditions
V
Rising V undervoltage lockout threshold
CC
Falling V undervoltage lockout threshold
CC
8.1
7.2
0.5
—
9.0
8.0
9.9
CCUV+
V
CCUV-
8.8
1.5
V
V
V
undervoltage lockout Hysteresis
CC
1.0
CCUVH
I
Micropower startup V
supply current
75
150
950
16.8
V ≤ V
CC CCUV-
QCCUV
CC
μA
I
Quiescent V supply current
—
500
15.6
QCC
CC
V
V
zener clamp voltage
14.4
V
I
= 5mA
CLAMP
CC
CC
Floating Supply Characteristics
Symbol Definition
Min.
Typ.
Max. Units Test Conditions
I
I
Micropower startup V supply current
BS
—
—
—
0
30
4.0
10
50
V
≤ V
QBSUV
CC CCUV-
μA
Quiescent VBS supply current
QBS
V
Minimum required V voltage for proper
5.0
V
V
=V
+ 0.1V
BSMIN
BS
CC CCUV+
functionality from R to HO
T
I
Offset supply leakage current
—
—
—
50
μA
V
V = V = 600V
B S
LK
VF
Bootstrap diode forward voltage (IR2153D)
0.5
1.0
IF = 250mA
Oscillator I/O Characteristics
Symbol Definition
Min.
Typ.
Max. Units Test Conditions
f
Oscillator frequency
19.4
20
20.6
R = 36.9kΩ
T
RT = 7.43kΩ
fo < 100kHz
osc
kHz
94
48
—
100
50
106
52
d
R pin duty cycle
T
%
I
C
T
pin current
0.001
0.70
8.0
1.0
1.2
—
uA
mA
CT
I
UV-mode C pin pulldown current
0.30
—
V
= 7V
CC
T
CTUV
V
Upper C ramp voltage threshold
T
CT+
CT-
V
—
4.0
—
V
Lower C ramp voltage threshold
T
V
V
C
voltage shutdown threshold
T
1.8
—
—
—
—
2.1
10
2.4
50
CTSD
I
= 100μA
= 1mA
= 100μA
= 1mA
≤ V
High-level R output voltage, V - V
T
CC
RT
RT
RT+
100
10
300
50
I
I
I
RT
RT
RT
V
Low-level R output voltage
T
RT-
100
300
mV
—
—
0
100
50
V
I
V
V
UV-mode R output voltage
T
RTUV
CC
CCUV-
10
= 100μA,
SD-Mode R output voltage, V
- V
RTSD
T
CC
RT
RT
V
= 0V
CT
—
10
300
I
= 1mA,
RT
V
= 0V
CT
4
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