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IR2117STRPBF 参数 Datasheet PDF下载

IR2117STRPBF图片预览
型号: IR2117STRPBF
PDF下载: 下载PDF文件 查看货源
内容描述: 栅极驱动电压范围为10〜 20V [Gate drive supply range from 10 to 20V]
分类和应用: 栅极栅极驱动
文件页数/大小: 18 页 / 272 K
品牌: INFINEON [ Infineon ]
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IR2117(S)/IR2118(S)&(PbF)  
Dynamic Electrical Characteristics  
V
(V , V ) = 15V, C = 1000 pF and T = 25°C unless otherwise specified. The dynamic electrical characteristics  
BIAS CC BS  
L
A
are measured using the test circuit shown in Figure 3.  
Symbol  
Definition  
Turn-on propagation delay  
Turn-off propagation delay  
Turn-on rise time  
Min. Typ. Max. Units Test Conditions  
t
125  
105  
80  
200  
180  
130  
65  
V = 0V  
S
on  
t
V = 600V  
S
off  
ns  
t
r
t
f
Turn-off fall time  
40  
Static Electrical Characteristics  
V
(V , V ) = 15V and T = 25°C unless otherwise specified. The V , V and I parameters are referenced to  
O O  
BIAS CC BS  
A
IN TH  
IN  
COM. The V and I parameters are referenced to COM and are applicable to the respective output leads: HO or LO.  
Symbol  
Definition  
Min. Typ. Max. Units Test Conditions  
V
input voltage - logic “1” (IR2117) logic “0” (IR2118)  
Input voltage - logic “0” (IR2117) logic “1” (IR2118)  
9.5  
50  
70  
IH  
V
V
IL  
6.0  
100  
100  
50  
V
OH  
High level output voltage, V  
Low level output voltage, V  
- V  
I
I
= 0A  
= 0A  
BIAS  
O
O
mV  
V
OL  
O
O
I
LK  
Offset supply leakage current  
V = V = 600V  
B S  
I
Quiescent V supply current  
BS  
240  
340  
V
= 0V or V  
CC  
QBS  
IN  
IN  
I
Quiescent V  
Supply Current  
CC  
V
= 0V or V  
CC  
QCC  
µA  
I
Logic “1” input bias current  
Logic “0” input bias current  
(IR2117)  
(IR2118)  
(IR2117)  
(IR2118)  
V
= V  
IN CC  
IN+  
20  
40  
V
= 0V  
= 0V  
IN  
IN  
I
V
IN-  
1.0  
V
IN  
= V  
CC  
V
V
V
V
V
supply undervoltage positive going threshold  
7.6  
7.2  
7.6  
7.2  
200  
8.6  
8.2  
8.6  
8.2  
250  
9.6  
9.2  
9.6  
9.2  
BSUV+  
BS  
BS  
CC  
CC  
V
supply undervoltage negative going threshold  
supply undervoltage positive going threshold  
supply undervoltage negative going threshold  
BSUV-  
V
V
CCUV+  
V
CCUV-  
I
Output high short circuit pulsed current  
V = 0V  
O
O+  
V
IN  
= Logic “1”  
PW 10 µs  
= 15V  
mA  
I
Output low short circuit pulsed current  
420  
500  
V
O
O-  
V
IN  
= Logic “0”  
PW 10 µs  
www.irf.com  
3
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