Data Sheet No. PD-6.030C
IR2113
HIGH AND LOW SIDE DRIVER
Features
n
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n
CMOS Schmitt-triggered inputs with pull-down
n
Cycle by cycle edge-triggered shutdown logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
600V max.
2A / 2A
10 - 20V
120 & 94 ns
10 ns
Packages
Description
The IR2113 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs.
The output drivers feature a high pulse current buffer
stage designed for minimum driver cross-conduc-
tion. Propagation delays are matched to simplify
use in high frequency applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration
which operates up to 600 volts.
Typical Connection
up to 600V
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
TO
LOAD
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-61
IRF [ INTERNATIONAL RECTIFIER ]
