Preliminary Data Sheet No. PD60045
I
IR2103/IR21034
HIGH AND LOW SIDE DRIVER
Features
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set deadtime
High side output in phase with HIN input
Low side output out of phase with
LIN
input
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Deadtime (typ.)
600V max.
130 mA / 270 mA
10 - 20V
680 & 150 ns
520 ns
•
•
•
•
•
•
•
•
Packages
Description
The IR2103/IR21034 are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Propri-
etary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
output. The output drivers feature a high pulse cur-
rent buffer stage designed for minimum driver
cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
8 Lead SOIC
IR2103S
14 Lead SOIC
IR21034S
8 Lead PDIP
IR2103
14 Lead PDIP
IR21034
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
IRF [ INTERNATIONAL RECTIFIER ]
