IR2103(S)PBF
Half-Bridge Driver
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V and 15V logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set deadtime
High side output in phase with HIN input
Low side output out of phase with LIN input
Product Summary
V
OFFSET
(max)
I
O+/-
V
OUT
ton/off (typ.)
Deadtime (typ.)
600V
130mA / 270mA
10V – 20V
680 & 150 ns
520 ns
Description
The IR2103(S) are high voltage, high speed power MOSFET and
IGBT drivers with dependent high and low side referenced output
channels. Proprietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The floating channel
can be used to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
Package Options
8 Lead SOIC
8 Lead PDIP
Ordering Information
Base Part Number
IR2103SPBF
IR2103SPBF
IR2103PBF
Standard Pack
Package Type
SO8N
SO8N
PDIP8
Form
Tube
Tape and Reel
Tube
Quantity
95
2500
50
Orderable Part Number
IR2103SPBF
IR2103STRPBF
IR2103PBF
1
www.irf.com
© 2013 International Rectifier
April 18, 2013
IRF [ INTERNATIONAL RECTIFIER ]
