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Data Sheet No. PD-6.043C
IR2101
HIGH AND LOW SIDE DRIVER
Features
n
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout
n
5V Schmitt-triggered input logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
600V max.
100 mA / 210 mA
10 - 20V
130 & 90 ns
30 ns
Description
The IR2101 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is com-
patible with standard CMOS or LSTTL outputs. The
output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configura-
tion which operates up to 600 volts.
Packages
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-1
IRF [ INTERNATIONAL RECTIFIER ]
