50RIA Series
Bulletin I2401 rev. A 07/00
Switching
Parameter
di/dt
Max. rate of rise of turned-on
current
V
DRM
≤
600V
V
DRM
≤
1600V
t
d
t
q
Typical delay time
200
100
0.9
µs
Typical turn-off time
110
A/µs
50RIA
Units
Conditions
T
C
= 125°C, V
DM
= rated V
DRM
Gate pulse = 20V, 15Ω, t
p
= 6µs, t
r
= 0.1µs max.
I
TM
= (2x rated di/dt) A
T
C
= 25°C V
DM
= rated V
DRM
I
TM
= 10A dc resistive circuit
Gate pulse = 10V, 15Ω source, t
p
= 20µs
T
C
= 125°C, I
TM
= 50A, reapplied dv/dt = 20V/µs
dir/dt = -10A/µs, V
R
=50V
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
50RIA
200
500 (*)
Units Conditions
V/µs
T
J
= T
J
max. linear to 100% rated V
DRM
T
J
= T
J
max. linear to 67% rated V
DRM
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
P
GM
I
GM
+V
GM
-V
GM
I
GT
Maximum peak gate power
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
DC gate current required
to trigger
10
250
100
50
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
3.5
2.5
5.0
0.2
V
mA
V
mA
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
Max. gate current/ voltage not to
T
J
= T
J
max
V
DRM
= rated voltage trigger is the max. value which
will not trigger any unit with rated
T
J
= T
J
max
V
DRM
anode-to-cathode applied
20
V
50RIA
10
2.5
2.5
Units Conditions
W
A
T
J
= T
J
max, t
p
≤
5ms
Max. required gate trigger
current/voltage are the
lowest value which will trigger
all units 6V anode-to-cathode
applied
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