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113MT120KBS90PBF 参数 Datasheet PDF下载

113MT120KBS90PBF图片预览
型号: 113MT120KBS90PBF
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 6 Element]
分类和应用: 栅极触发装置可控硅整流器局域网
文件页数/大小: 9 页 / 115 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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53-93-113MT..KB Series
Bulletin I27503 08/97
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
53/52/51MT.KB
93/92/91MT.KB
113/112/111MT.KB
Sinusoidal conduction @ T
J
max.
180
o
Rectangular conduction @ T
J
max.
30
o
120
o
90
o
60
o
180
o
120
o
0.091
0.044
0.037
90
o
0.117
0.055
0.046
60
o
0.157
0.071
0.059
30
o
0.236
0.100
0.082
Units
K/W
0.072
0.033
0.027
0.085
0.039
0.033
0.108
0.051
0.042
0.152
0.069
0.057
0.233
0.099
0.081
0.055
0.027
0.023
Ordering Information Table
Device Code
11
1
3
2
MT
3
160
4
K
B
5
S90
6
1
-
Current rating code: 5 = 55 A (Avg)
9 = 90 A (Avg)
11 = 110 A (Avg)
2
-
Circuit configuration code: 3 = Full-controlled bridge
2 = Positive half-controlled bridge
1 = Negative half-controlled bridge
3
4
5
6
-
-
-
-
Essential part number
Voltage code: Code x 10 = V
RRM
(See Voltage Ratings Table)
Generation
II
Critical dv/dt: None = 500V/µs (Standard value)
S90
= 1000V/µs (Special selection)
full-controlled bridge
(53, 93, 113MT..KB)
positive half-controlled bridge
(52, 92, 112MT..KB)
negative half-controlled bridge
(51, 91, 111MT..KB)
NOTE: To order the Optional Hardware see Bulletin I27900
4
www.irf.com