111RIA Series
Bulletin I25204 01/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
40
111RIA
80
120
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
800
1200
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1300
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
20
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
111RIA
110
90
172
2080
2180
1750
1830
Units Conditions
A
°C
DC @ 83°C case temperature
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
KA
√s
2
180° conduction, half sine wave
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I t
2
Maximum I t for fusing
2
21.7
19.8
15.3
14.0
I
√t
2
Maximum I
√t
for fusing
2
217
0.82
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Typical latching current
V
1.02
(I >
π
x I
T(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
1.70
1.57
150
400
V
mA
(I >
π
x I
T(AV)
),T
J
= T
J
max.
I
pk
= 350A, T
J
= T
J
max., t
p
= 10ms sine pulse
T
J
= 25°C, anode supply 6V resistive load
2.16
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
t
q
Typical delay time
Typical turn-off time
111RIA
300
1
Units Conditions
A/µs
Gate drive 20V, 20Ω, t
r
≤
1µs
T
J
= T
J
max, anode voltage
≤
80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 50A, T
J
= T
J
max., di/dt = -5A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 25Ω
110
2
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