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111RIA80M 参数 Datasheet PDF下载

111RIA80M图片预览
型号: 111RIA80M
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Controlled Rectifier, 110000mA I(T), 800V V(DRM)]
分类和应用: 栅极触发装置可控硅整流器
文件页数/大小: 8 页 / 120 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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110/111RIA Series
Bulletin I25204 rev. B 09/03
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
110/111RIA
500
20
Units Conditions
V/µs
mA
T
J
= T
J
max. linear to 80% rated V
DRM
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
I
GM
+V
GM
-V
GM
Maximum peak gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
TYP.
I
GT
DC gate current required
to trigger
180
80
40
V
GT
DC gate voltage required
to trigger
2.5
1.6
1
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
6.0
0.25
P
G(AV)
Maximum average gate power
110/111RIA
12
3.0
3.0
20
Units Conditions
W
A
T
J
= T
J
max, t
p
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
5ms
V
10
MAX.
-
120
-
-
2
-
mA
V
V
mA
T
J
= T
J
max, t
p
5ms
T
J
= - 40°C
T
J
= 25°C
T
J
= 140°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 140°C
T
J
= T
J
max
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. operating temperature range
Max. storage temperature range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting torque, ± 10%
110/111RIA
-40 to 140
-40 to 150
0.27
Units Conditions
°C
DC operation
K/W
0.1
15.5
(137)
14
(120)
Nm
(lbf-in)
Mounting surface, smooth, flat and greased
Non lubricated threads
Lubricated threads
wt
Approximate weight
Case style
130
g
See Outline Table
TO - 209AC (TO-94)
www.irf.com
3