110/111RIA Series
Bulletin I25204 rev. B 09/03
Instantaneous On-State Current (A)
10000
Tj = 25˚C
1000
Tj = 140˚C
100
10
110/111RIA Series
111RIA Series
1
0
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
1
Steady State Value
RthJC = 0.27 K/W
(DC Operation)
0.1
0.01
110/111RIA Series
111RIA Series
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
100
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20V, 30ohms;
tr<=0.5 µs, tp=>6µs
b) Recommended load line for
10
<=30% rated di/dt: 15V, 40ohms
tr<=1 µs, tp=>6µs
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
(a)
(b)
Tj=-40 ˚C
Tj=25 ˚C
1
VGD
0.1
0.001
IGD
0.01
Tj=140 ˚C
(1)
(2)
(3)
(4)
Device: 110/111RIA Series
Device: 111RIA Series
Frequency Limited by PG(AV)
0.1
1
10
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
100
1000
www.irf.com
7
IRF [ INTERNATIONAL RECTIFIER ]
