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10TTS08S 参数 Datasheet PDF下载

10TTS08S图片预览
型号: 10TTS08S
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装相位控制可控硅 [SURFACE MOUNTABLE PHASE CONTROL SCR]
分类和应用: 可控硅
文件页数/大小: 8 页 / 87 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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10TTS08S
SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
Triggering
Parameters
P
GM
Max. peak Gate Power
10TTS08S Units
8.0
2.0
1.5
10
20
15
10
A
V
mA
W
Conditions
P
G(AV)
Max. average Gate Power
+ I
GM
Max. paek positive Gate Current
- V
GM
Max. paek negative Gate Voltage
I
GT
Max. required DC Gate Current
to trigger
Anode supply = 6V, resistive load, T
J
= - 65°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
GT
Max. required DC Gate Voltage
to trigger
1.2
1
0.7
V
Anode supply = 6V, resistive load, T
J
= - 65°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.2
0.1
mA
T
J
= 125°C, V
DRM
= rated value
Switching
Parameters
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
10TTS08S
0.8
3
100
Units
µs
T
J
= 25°C
T
J
= 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
Soldering Temperature
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Typ. Thermal Resistance Junction
to Ambient (PCB Mount)**
wt
T
Approximate Weight
Case Style
2 (0.07)
g (oz.)
D
2
Pak (SMD-220)
10TTS08S Units
- 40 to 125
- 40 to 125
240
1.5
40
°C
°C
°C
°C/W
°C/W
Conditions
for 10 seconds (1.6mm from case)
DCoperation
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
3