10RIA Series
Bulletin I2405 rev. A 07/00
Switching
Parameter
di/dt
Max. rate of rise of turned-on
current
V
DRM
≤
600V
V
DRM
≤
800V
V
DRM
≤
1000V
V
DRM
≤
1600V
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
200
180
160
150
0.9
4
µs
T
J
= 25°C,
at = rated V
DRM
/V
RRM
, T
J
= 125°C
T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200µs, di/dt = -10A/µs
Typical turn-off time
110
T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200µs, V
R
= 100V,
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% V
DRM
, gate bias 0V-100W
(*) t
q
= 10µsup to 600V, t
q
= 30µs up to 1600V available on special request.
A/µs
10RIA
Units
Conditions
T
J
= T
J
max., V
DM
= rated V
DRM
Gate pulse = 20V, 15Ω, t
p
= 6µs, t
r
= 0.1µs max.
I
TM
= (2x rated di/dt) A
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
10RIA
100
300 (*)
Units Conditions
V/µs
T
J
= T
J
max. linear to 100% rated V
DRM
T
J
= T
J
max. linear to 67% rated V
DRM
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 10RIA120S90.
Triggering
Parameter
P
GM
I
GM
-V
GM
I
GT
Maximum peak gate power
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak negative
gate voltage
DC gate current required
to trigger
90
60
35
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
3.0
2.0
1.0
2.0
0.2
V
V
mA
V
mA
T
J
= - 65°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 65°C
T
J
= 25°C
T
J
= 125°C
T
J
= T
J
max., V
DRM
= rated value
T
J
= T
J
max.
V
DRM
= rated value
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
10RIA
8.0
2.0
1.5
10
Units Conditions
W
A
V
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
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