10MQ100N
Bulletin PD-20520 rev. M 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
10MQ100N
100
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 4
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6, T
J
= 25°C
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
10MQ
1.5
120
30
1.0
0.5
Units
A
Conditions
50% duty cycle @ T
L
= 126 °C, rectangular wave form.
On PC board 9mm
2
island (.013mm thick copper pad area)
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
J
= 25 °C, I
AS
= 0.5A, L = 8mH
Following any rated
load condition and
with rated V
RRM
applied
A
mJ
A
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
10MQ
0.78
0.85
0.63
0.68
Units
V
V
V
V
mA
mA
V
mΩ
pF
nH
V/µs
@ 1A
@ 1.5A
@ 1A
@ 1.5A
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
max.
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
Max. Reverse Leakage Current (1)
* See Fig. 2
0.1
1
0.52
78.4
38
2.0
10000
V
F(TO)
Threshold Voltage
r
t
C
T
L
S
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
(Rated V
R
)
(1) Pulse Width < 300µs, Duty Cycle < 2%
V
R
= 10V
DC
, T
J
= 25°C, test signal = 1Mhz
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
10MQ
- 55 to 150
80
Units
°C
°C
°C/W DC operation
Conditions
Max. Junction Temperature Range (*) - 55 to 150
R
thJA
Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
0.07(0.002) g (oz.)
SMA
IR1J
Similar D-64
thermal runaway condition for a diode on its own heatsink
2
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