10BQ030
Bulletin PD-20708 rev. G 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
10BQ030
30
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
10BQ
1.0
430
90
3.0
1.0
Units
A
Conditions
50% duty cycle @ T
L
= 106 °C, rectangular wave form.
Following any rated
5µs Sine or 3µs Rect. pulse
load condition and
10ms Sine or 6ms Rect. pulse with rated V
RRM
applied
T
J
= 25 °C, I
AS
= 1A, L = 6mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
mJ
A
Electrical Specifications
Parameters
V
FM
V
FM
Max. Forward Voltage Drop
Max. Forward Voltage Drop
(1)
(1)
10BQ
0.420
0.470
0.300
0.370
0.5
Units
V
V
V
V
mA
mA
mA
pF
nH
V/µs
@ 1A
@ 2A
@ 1A
@ 2A
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
Conditions
T
J
= 25 °C
T
J
= 125 °C
I
RM
C
T
L
S
Max. Reverse Leakage Current (1)
5.0
15
V
R
= rated V
R
Max. Junction Capacitance
Typical Series Inductance
(Rated V
R
)
200
2.0
10000
V
R
= 5V
DC
, (test signal range 100KHz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
10BQ
- 55 to 150
25
80
Units
°C
°C
°C/W DC operation
°C/W
Conditions
Max. Junction Temperature Range (*) - 55 to 150
R
thJL
Max. Thermal Resistance Junction
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
0.10 (0.003) g (oz.)
SMB
IR1E
Similar DO-214AA
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
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