10BQ015
Bulletin PD-2.396 rev. I 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
10BQ015
15
25
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 5
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
10BQ
1.0
140
40
1.0
1.0
Units
A
Conditions
50% duty cycle @ T
L
= 84 °C, rectangular wave form.
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
J
= 25 °C, I
AS
= 1A, L = 2mH
Current decayng linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Following any rated
load condition and
with rated V
RRM
applied
A
mJ
A
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
10BQ
0.35
0.44
0.32
0.40
Units
V
V
V
V
mA
mA
V
mΩ
pF
nH
V/µs
@ 1.0A
@ 2.0A
@ 1.0A
@ 2.0A
T
J
= 25 °C
T
J
= 100 °C
T
J
= T
J
max.
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
Max. Reverse Leakage Current
* See Fig. 2
(1)
0.5
12
-
-
390
2.0
10000
V
F(TO)
Threshold Voltage
r
t
C
T
L
S
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
V
R
= 5V
DC
, (test signal range 100KHz to 1MHz) 25°C
Measured lead to lead 5mm from package body
(Rated V
R
)
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
(**)
80
°C/W DC operation
10BQ
- 55 to 125
- 55 to 150
36
Units
°C
°C
Conditions
R
thJL
Max. Thermal Resistance
Junction to Lead
R
thJA
Max. Thermal Resistance
Junction to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
<
1
°C/W DC operation (See Fig. 4)
0.10 (0.003) g (oz.)
SMB
IR1C
Similar to DO-214AA
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j-a)
(**) Mounted 1 inch square PCB
2
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