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ISL9014IRBJZ 参数 Datasheet PDF下载

ISL9014IRBJZ图片预览
型号: ISL9014IRBJZ
PDF下载: 下载PDF文件 查看货源
内容描述: 双路LDO具有低噪声,低智商和高PSRR [Dual LDO with Low Noise, Low IQ and High PSRR]
分类和应用:
文件页数/大小: 11 页 / 212 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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ISL9014
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
T
A
= -40°C to +85°C; V
IN
= (V
O
+ 1.0V) to 6.5V with a minimum V
IN
of 2.3V; C
IN
= 1µF; C
O
= 1µF;
C
BYP
= 0.01µF.
(Continued)
SYMBOL
TEST CONDITIONS
I
O
= 100µA, V
O
= 1.5V, T
A
= +25°C, C
BYP
= 0.1µF
BW = 10Hz to 100kHz
MIN
MAX
(Note 7) TYP (Note 7)
30
UNITS
µV
RMS
PARAMETER
Output Noise Voltage
DEVICE START-UP CHARACTERISTICS
Device Enable Time
LDO Soft-Start Ramp Rate
EN1, EN2 PIN CHARACTERISTICS
Input Low Voltage
Input High Voltage
Input Leakage Current
Pin Capacitance
NOTES:
6. VOx = 0.98*VOx(NOM); Valid for VOx greater than 1.85V.
7. Parts are 100% tested at +25°C. Temperature limits established by characterization and are not production tested.
V
IL
V
IH
I
IL
, I
IH
C
PIN
Informative
5
-0.3
1.4
0.5
V
IN
+ 0.3
0.1
V
V
µA
pF
t
EN
t
SSR
Time from assertion of the ENx pin to when the output voltage
reaches 95% of the VO(nom)
Slope of linear portion of LDO output voltage ramp during
start-up
250
30
500
60
µs
µs/V
4
FN9245.3
March 11, 2008