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IRFBC40 参数 Datasheet PDF下载

IRFBC40图片预览
型号: IRFBC40
PDF下载: 下载PDF文件 查看货源
内容描述: 6.2A , 600V , 1.200 Ohm的N通道功率MOSFET [6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 58 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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IRFBC40
Typical Performance Curves
3.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
= 3.4A, V
GS
= 10V
Unless Otherwise Specified
(Continued)
1.25
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
2.4
1.15
1.8
1.05
1.2
0.95
0.6
0.85
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
0.75
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
g
fs
, TRANSCONDUCTANCE (S)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
10
2400
C, CAPACITANCE (pF)
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
100V
T
J
= 25
o
C
1800
C
ISS
6
T
J
= 150
o
C
1200
C
OSS
600
C
RSS
0
0
2
10
20
50
5
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
10
2
4
2
0
0
2
4
6
I
D,
DRAIN CURRENT (A)
8
10
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT
20
GATE TO SOURCE VOLTAGE (V)
I
D
= 6.2A
16
V
DS
= 120V
12
V
DS
= 240V
V
DS
= 360V
8
4
0
0
12
24
36
48
60
Q
g,
GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-267