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IRF840 参数 Datasheet PDF下载

IRF840图片预览
型号: IRF840
PDF下载: 下载PDF文件 查看货源
内容描述: 8A , 500V , 0.850 Ohm的N通道功率MOSFET [8A, 500V, 0.850 Ohm, N-Channel Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 60 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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IRF840
Typical Performance Curves
10
2
10µs
I
D
, DRAIN CURRENT (A)
10
I
D
, DRAIN CURRENT (A)
Unless Otherwise Specified
(Continued)
15
V
GS
= 10V
12
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 6.0V
100µs
1ms
9
V
GS
= 5.5V
6
1
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
1
10
10
2
10ms
DC
3
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
200
250
0.1
10
3
0
0
50
100
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
12
V
GS
= 6.0V
V
GS
= 10V
100
I
SD
(ON), DRAIN TO SOURCE
CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
50V
10
9
1
T
J
= 150
o
C
0.1
T
J
= 25
o
C
6
V
GS
= 5.5V
3
V
GS
= 4.0V
0
0
V
GS
= 5.0V
V
GS
= 4.5V
0.01
3
6
9
12
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
15
0
2
4
6
8
V
SD
, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
10
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE VOLTAGE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.0
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
8
2.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
= 4.4A, V
GS
= 10V
6
V
GS
= 10V
4
1.8
1.2
2
V
GS
= 20V
0.6
0
0
8
32
16
24
T
C
, CASE TEMPERATURE (
o
C)
40
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-260