IRF740
Typical Performance Curves
1.25
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
1.15
C, CAPACITANCE (pF)
2000
Unless Otherwise Specified
(Continued)
2500
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
1.05
1500
C
ISS
0.95
1000
C
OSS
500
C
RSS
0.85
0.75
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
1
2
T
J
, JUNCTION TEMPERATURE (
o
C)
2
10
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
10
2
5
5
10
3
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
g
fs
, TRANSCONDUCTANCE (S)
12
T
J
= 25
o
C
9
T
J
= 150
o
C
6
I
SD
, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
T
J
= 150
o
C
T
J
= 25
o
C
1.0
3
0
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
0.1
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1.5
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
V
GS,
GATE TO SOURCE VOLTAGE (V)
I
D
= 10A
16
V
DS
= 80V
12
V
DS
= 200V
V
DS
= 320V
8
4
0
0
12
24
36
48
60
Q
g,
GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-243
INTERSIL [ INTERSIL CORPORATION ]
