IRF730
Typical Performance Curves
1.25
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.15
1200
C
ISS
Unless Otherwise Specified
(Continued)
1500
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
1.05
C, CAPACITANCE (pF)
900
0.95
C
OSS
600
0.85
300
C
RSS
0.75
-40
0
40
80
120
160
0
T
J
, JUNCTION TEMPERATURE (
o
C)
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
I
SD
, SOURCE TO DRAIN CURRENT (A)
g
fs
, TRANSCONDUCTANCE (S)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
6
T
J
= 25
o
C
10
4
T
J
= 150
o
C
2
T
J
= 150
o
C
1
T
J
= 25
o
C
0
0.1
0
2
4
6
I
D
, DRAIN CURRENT (A)
8
10
0
0.4
0.8
1.2
1.6
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 5.5A
16
V
DS
= 320V
V
DS
= 200V
V
DS
= 80V
12
8
4
0
0
8
16
24
32
40
Q
g
, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-236
INTERSIL [ INTERSIL CORPORATION ]
