HIN202E thru HIN241E
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
128 mils x 77 mils
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
METALLIZATION:
Type: Al
Thickness: 10kÅ ±1kÅ
TRANSISTOR COUNT:
185
SUBSTRATE POTENTIAL
PROCESS:
GND
CMOS Metal Gate
Metallization Mask Layout
HIN232E
V-
C2-
C2+
C1-
PIN 6
PIN 5
PIN 4
PIN 3
PIN 2 V+
PIN 1 C1+
T2
OUT
PIN 7
PIN 8
R2
IN
T3
PIN 9
OUT
PIN 17 V
CC
R2
PIN 10
OUT
PIN 11
T2
PIN 12
T1
PIN 13
PIN 14
R1
PIN 15
T1
OUT
PIN 16
GND
R1
IN
IN
OUT
IN
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
EUROPE
ASIA
Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
3-15
INTERSIL [ Intersil ]
