HS-245RH, HS-246RH, HS-248RH
Die Characteristics
DIE DIMENSIONS:
45 mils x 47 mils x 11 mils
1140µm x 1190µm x 280µm
INTERFACE MATERIALS:
Glassivation:
Type: Silox
Thickness: 8k
Å
±1k
Å
Top Metallization:
Type: T.W.
Thickness: 2.5k
Å
±0.5k
Å
Type: Al
Thickness: 14k
Å
±2k
Å
Substrate:
ALPS Bipolar/Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
1.4 x 10
5
A/cm
2
Transistor Count:
9
Metallization Mask Layout
HS-246RH
VCC R1 AND R2
HS-248RH
VCC R1 AND R2
(+) INPUT
(+) INPUT
(-) INPUT
(-) INPUT
VCC R3
OUTPUT R1
(-) INPUT
3
VEE R1 AND R2
OUTPUT R1
(-) INPUT
VCC R3
VEE R1 AND R2
VEE R3
OUTPUT R3
(+) INPUT
VEE R3
(+) INPUT
OUTPUT R3
(+) INPUT
GND
OUTPUT R2
(+) INPUT
(-) INPUT
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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8
OUTPUT R2
(-) INPUT
GND
INTERSIL [ INTERSIL CORPORATION ]
