HCS244T
Die Characteristics
DIE DIMENSIONS:
(2747µm x 2693µm x 533µm
±51.0µm)
108 x 106 x 21mils
±2mil
METALLIZATION:
Type: Al Si
Thickness: 11.0k
Å
±1k
Å
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 13.0k
Å
±2.6k
Å
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
224
PROCESS:
CMOS SOS
Metallization Mask Layout
HCS244T
Y3 2
(3)
A0 1
(2)
OE
(1)
V
CC
(20)
OE 2
(19)
(18) Y0 1
A1 1 (4)
Y2 2 (5)
(17) A3 2
(16) Y1 1
A2 1 (6)
(15) A2 2
Y1 2 (7)
(14) Y2 1
(8)
A3 1
(9)
Y0 2
(10)
GND
(11)
A0 2
(12)
Y3 1
(13)
A1 2
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3
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