HCS138T
Die Characteristics
DIE DIMENSIONS:
(2159µm x 2565µm x 533µm
±51µm)
85 x 101 x 21mils
±2mil
METALLIZATION:
Type: Al Si
Thickness: 11.0k
Å
±1k
Å
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 13.0k
Å
±2.6k
Å
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
264
PROCESS:
CMOS SOS
Metallization Mask Layout
HCS138T
A1
(2)
A0
(1)
V
CC
(16)
Y0
(15)
A2 (3)
(14) Y1
NC
NC
(13) Y2
E1 (4)
E2 (5)
(12) Y3
E3 (6)
(11) Y4
NC
NC
(7)
Y7
(8)
GND
(9)
Y6
(10)
Y5
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The
mask series for the HCS138 is TA14361A.
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