ISL70003ASEH
Electrical Specifications Unless otherwise noted, PVINx = AVDD = DVDD = 3V - 13.2V; GND = AGND = DGND = PGNDx = SGND = 0V;
POR_V = 0.65V; SYNC = LXx = Open Circuit; PGOOD is pulled up to VREFD with a 3k resistor; REF is bypassed to GND with a 220nF capacitor; SS is
IN
bypassed to GND with a 100nF capacitor; I
= 0A; T = T = +25°C. (Note 4). Boldface limits apply across the operating temperature range, -55°C to
OUT
A
J
+125°C; over a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 to 300rad(Si)/s; or over a total ionizing dose of 50krad(Si) with
exposure at a low dose rate of <10mrad(Si)/s. (Continued)
MIN
MAX
PARAMETER
ERROR AMPLIFIER
TEST CONDITIONS
(Note 13)
TYP
(Note 13)
UNIT
DC Gain
(Note 12)
(Note 12)
80
7
dB
MHz
V
Gain-bandwidth Product
Maximum Output Voltage
Slew Rate
V
= 5.5V
3.5
-3
4.2
8.5
IN
(Note 12)
= 0.6V, PV = 13.2V
V/µs
nA
Feedback (FB) Input Leakage Current
V
250
3
FB
INx
Offset Voltage (V
POWER BLOCKS
)
0
mV
IO
CQFP Individual Upper FET r
CQFP Individual Lower FET r
LXx Output Leakage
Dead Time
PV = 3.0V, PVIN to LX
INx
170
120
90
420
310
240
210
1
700
600
455
425
3
mΩ
mΩ
mΩ
mΩ
µA
DS(ON)
PV = 5.5V, PVIN to LX
INx
PV = 3.0V, LX to GND
INx
DS(ON)
PV = 5.5V, LX to GND
INx
60
EN = LXx = GND, single LXx output
EN = GND, LXx = PV , Single LXx Output
INx
1
3
µA
Within a single power block or between power
blocks (Note 12)
4
ns
POWER-GOOD SIGNAL
Rising Threshold
V
V
V
V
as a % of V
as a % of V
as a % of V
as a % of V
107
2
111
3.5
89
115
5
%
%
FB
FB
FB
FB
REF
REF
REF
REF
Rising Hysteresis
Falling Threshold
85
2
93
5
%
Falling Hysteresis
3.5
%
Power-good Drive
PV = 3V, PGOOD = 0.4V, EN = GND
IN
7.2
mA
µA
Power-good Leakage
PROTECTION FEATURES
Undervoltage Protection
Undervoltage Trip Threshold
PV = PGOOD = 13.2V
IN
1
V
V
as a % of V , test mode
REF
71
86
75
90
79
94
%
%
FB
Undervoltage Recovery Threshold
Overcurrent Protection
as a % of V , test mode
REF
FB
Overcurrent Accuracy
ROCSETA, B = 6kΩ (IOC = 0.6A/LX) V = 12V
IN
0.43
0.6
0.77
A/LX
FN8746.0
August 5, 2015
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