ISL72027SEH
Assembly Related Information
Die Characteristics
SUBSTRATE POTENTIAL
Die Dimensions
Floating
2413µm x 3322µm (95mils x 130.79mils)
Thickness: 305µm ± 25µm (12mils ± 1 mil)
Additional Information
Interface Materials
WORST CASE CURRENT DENSITY
5
2
GLASSIVATION
1.6 x 10 A/cm
Type: 12kÅ Silicon Nitride on 3kÅ Oxide
TRANSISTOR COUNT
TOP METALLIZATION
4055
Type: 300Å TiN on 2.8µm AlCu
In Bondpads, TiN has been removed.
Weight of Packaged Device
0.31 grams
BACKSIDE FINISH
Lid Characteristics
Silicon
Finish: Gold
Potential: Grounded, tied to package pin 2
PROCESS
P6SOI
Metalization Mask Layout
8
7
6
5
4
3
2
1
RS
26
D
9
10
11
12
NC
GND
25
24
CANH
CANL
GND_ESD
VCC
13
14
VCC_VREF
23
VREF
NC
22
15
R
16
17
18 19
20
21
FN8763.1
November 9, 2015
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INTERSIL [ Intersil ]
