HS-1825ARH
Die Characteristics
DIE DIMENSIONS
4710µm x 3570µm (185 mils x 140 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
Å
±1.0k
Å
Top Metallization
Type: ALSiCu
Thickness: 16.0k
Å
±2k
Å
Substrate
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 10
5
A/cm
2
Transistor Count
225
HS-1825ARH
Metallization Mask Layout
RT (5)
(4) CLK/LEB
(3) EAOUT
CT (6)
(2) IN+
RAMP (7)
(1) IN-
SS (8)
(16) V
REF
ILIM (9)
OSCGND
(NOTE 1)
GND (10)
(14) OUTB
OUTA (11)
(12) PGND
(NOTE 2)
PGND (12)
(NOTE 2)
VC (13)
(NOTE 2)
(13) VC
(NOTE 2)
(15) V
CC
NOTES:
1. This is the oscillator ground (OSCGND) bond pad and must be
connected to GND.
2. PGND and VC each require two bond pad connections.
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3
FN4561.8
September 25, 2008
INTERSIL [ INTERSIL CORPORATION ]
