HS-117RH
Die Characteristics
DIE DIMENSIONS
2616µm x 2794µm (103 mils x 110 mils)
483µm
±25.4µm
(19 mils
±1
mil)
INTERFACE MATERIALS
Glassivation:
Type: Silox (SiO
2
)
Thickness: 8.0k
Å
±1.0k
Å
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
Å
±2k
Å
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Gold
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
95
Metallization Mask Layout
HS-117RH
V
IN
V
IN
V
OUT
V
OUT
ADJ
V
OUTK
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
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www.intersil.com
2
INTERSIL [ INTERSIL CORPORATION ]
