ACS257MS
Die Characteristics
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm
±25µm
(20.6 mils
±1
mil)
Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
METALLIZATION:
Al
Metal 1 Thickness: 0.7µm
±0.1µm
Metal 2 Thickness: 1.0µm
±0.1µm
SUBSTRATE POTENTIAL:
Unbiased Insulator
PASSIVATION
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm
±0.15µm
SPECIAL INSTRUCTIONS:
Bond V
CC
First
ADDITIONAL INFORMATION:
Worst Case Density: <2.0 x 10
5
A/cm
2
Transistor Count: 212
Metallization Mask Layout
ACS257MS
1I
0
S
V
CC
OE
1I
1
4I
0
1Y
4I
1
2I
0
4Y
2I
1
3I
0
2Y
GND
3Y
3I
1
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ISO9000
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2
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