HS-508BRH
Die Characteristics
DIE DIMENSIONS
120 mils x 93 mils x 19 mils
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8k
Å
±1k
Å
Top Metallization
Type: AlSiCu
Thickness: 16k
Å
±2k
Å
Substrate
Rad Hard Silicon Gate
Dielectric Isolation
Worst Case Current Density
6.68e04 A/cm
2
Transistor Count
506
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Metallization Mask Layout
HS-508BRH
IN2
(5)
IN1
(4)
-V
(3)
IN3
(6)
EN
(2)
IN4
(7)
OUT
(8)
A0
(1)
IN8
(9)
A1
(16)
IN7
(10)
A2
(15)
IN6
(11)
IN5
(12)
+V
(13)
GND
(14)
TABLE 2. HS-508BRH PAD COORDINATES
RELATIVE TO PIN 1
PIN NUMBER
1
2
3
4
5
6
7
8
PAD NAME
A0
EN
V-
IN1
IN2
IN3
IN4
OUT
X COORDINATES
0
-342
-818
-818
-818
-598
-224
-38
Y COORDINATES
0
0
-653
-879
-1221
-2579
-2579
-2579
3
FN4824.2
August 11, 2009
INTERSIL [ INTERSIL CORPORATION ]
