HS-26CLV32RH, HS-26CLV32EH
Die Characteristics
DIE DIMENSIONS:
78 mils x 123 mils x 21 mils
(1970µm x 3120µm)
Metallization:
Bottom: Mo/TiW
Thickness: 5800
Å ±
1k
Å
Top: Al/Si/Cu
Thickness: 10k
Å ±
1k
Å
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Bond Pad Size:
110µm x 100µm
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 8k
Å ±
1k
Å
Substrate:
AVLSI1RA, Silicon backside, V
DD
backside potential
Metallization Mask Layout
HS-26CLV32RH, HS-26CLV32EH
AIN
(1)
V
DD
(16)
BIN
(15)
TABLE 1. HS-26CLV32RH, HS-26CLV32EH PAD COORDINATES
PIN
NUMBER
1
2
PAD
NAME
AIN
AIN
A
OUT
ENABLE
C
OUT
CIN
CIN
GND
DIN
DIN
D
OUT
ENABLE
B
OUT
BIN
BIN
VDD
RELATIVE TO PIN 1
X COORDINATES Y COORDINATES
0
-337.1
-337.1
-337.1
-337.1
-337.1
0
418.4
776.4
1113.5
1113.5
1113.5
1113.5
1113.5
776.4
420.2
0
-362
-912.5
-1319.3
-1774.4
-2233.7
-2595.7
-2596.7
-2595.7
-2233.7
-1774.4
-1319.3
-898.4
-362
0
1
AIN (2)
(14) B
IN
3
4
5
6
A
OUT
(3)
(13) B
OUT
7
8
9
ENAB (4)
(12) ENAB
10
11
12
13
C
OUT
(5)
(11) D
OUT
14
15
16
C
IN
(6)
(10) D
IN
NOTE: Dimensions in microns
(7)
CIN
(8)
GND
(9)
DIN
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3
FN4907.4
January 8, 2013
INTERSIL [ INTERSIL CORPORATION ]
