ACS08MS
Die Characteristics
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm
±25µm
(20.6 mils
±1
mil)
Bond Pad: 110µm x 110µm (4.3 mils x 4.3 mils)
METALLIZATION:
Al
Metal 1 Thickness: 0.7µm
±0.1µm
Metal 2 Thickness: 1.0µm
±0.1µm
SUBSTRATE POTENTIAL:
Unbiased Insulator
PASSIVATION
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm
±0.15µm
SPECIAL INSTRUCTIONS:
Bond V
CC
First
ADDITIONAL INFORMATION:
Worst Case Density: <2.0 x 10
5
A/cm
2
Transistor Count: 176
Metallization Mask Layout
ACS08MS
B1
A1
V
CC
B4
Y1
A4
A2
Y4
NC
NC
B2
B3
Y2
GND
Y3
A3
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ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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http://www.intersil.com
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Republic of China
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FAX: (886) 2 2715 3029
2
INTERSIL [ INTERSIL CORPORATION ]
