IS-1009RH
Die Characteristics
DIE DIMENSIONS
1270µm x 1778µm (50 mils x 70 mils)
Thickness: 483µm
±25.4µm
(19 mils
±1
mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
)
Nitride Thickness: 4.0k
Å
±1.0k
Å
Silox Thickness: 12.0k
Å
±4.0k
Å
Top Metallization
Type: AlSiCu
Thickness: 16.0k
Å
±2k
Å
Substrate
EBHF, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<1.0 x 10
5
A/cm
2
Transistor Count
26
Metallization Mask Layout
IS-1009RH
ADJ
V+
V-
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2
FN4780.3
September 13, 2005
INTERSIL [ INTERSIL CORPORATION ]
