HS-0548RH, HS-0549RH
Die Characteristics
DIE DIMENSIONS:
83 mils x 108 mils x 19 mils
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 7k
Å
±0.7k
Å
Top Metallization:
Type: Al
Thickness: 16k
Å
±2k
Å
Substrate:
CMOS, DI
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Floating
ADDITIONAL INFORMATION:
Worst Case Current Density:
1.4 x 10
5
A/cm
2
Transistor Count:
253
Metallization Mask Layout
HS-0548RH
HS-0549RH
IN 6
IN 7
IN 8
OUT
IN 4
IN 3
IN3B IN4B OUT B
OUT A
IN4A IN3A
IN 5
+V
GND
IN 2
IN 1
-V
IN2B
IN1B
+V
IN2A
IN1A
V-
A2
A1
A0
EN
GND
A1
A0
EN
NOTE: Pad Numbers Correspond to DIP Pin Numbers Only
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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http://www.intersil.com
6
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