HS-0546RH, HS-0547RH
Die Characteristics
DIE DIMENSIONS:
83.9 mils x 159 mils x 19 mils
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 7k
Å
±0.7k
Å
Top Metallization:
Type: Al
Thickness: 16k
Å
±2k
Å
Substrate:
CMOS, DI
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
1.4 x 10
5
A/cm
2
Transistor Count:
HS-0546 - 485
HS-0547 - 485
Metallization Mask Layout
HS-0546RH
EN
A0
A1 A2
A3
V
REF
GND
EN
A0
HS-0547RH
A1 A2
NC V
REF
GND
IN 1
IN 2
IN 9
IN 10
IN 1A
IN 2A
IN 1B
IN 2B
IN 3
IN 4
IN 11
IN 12
IN 3A
IN 4A
IN 3B
IN 4B
IN 5
IN 6
IN 13
IN 14
IN 5A
IN 6A
IN 5B
IN 6B
IN 7
IN 8
IN 15
IN 16
IN 7A
IN 8A
IN 7B
IN 8B
-V
OUT
+V
NC
-V
OUT A
+V
OUT B
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
6
FN3544.4
March 13, 2006
INTERSIL [ INTERSIL CORPORATION ]
