HS-2600RH
Die Characteristics
DIE DIMENSIONS:
69 mils x 56 mils x 19 mils
±1
mils
1750µm x 1420µm x 483µm
±25.4µm
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
Å
±2k
Å
Nitride Thickness: 3.5k
Å
±1.5k
Å
Top Metallization:
Type: Al, 1% Cu
Thickness: 16k
Å
±2k
Å
Substrate:
Linear Bipolar DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential
(Powered Up):
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 10
5
A/cm
2
Transistor Count:
140
Metallization Mask Layout
+IN
-IN
HS-2600RH
BAL
V-
COMP
BAL
V+
OUT
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ISO9000
quality systems certification.
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out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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http://www.intersil.com
5
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