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419WZ 参数 Datasheet PDF下载

419WZ图片预览
型号: 419WZ
PDF下载: 下载PDF文件 查看货源
内容描述: 单数控电位器( XDCP )低噪声,低功耗, SPI总线, 128个抽头,抽头只 [Single Digitally Controlled Potentiometer(XDCP) Low Noise, Low Power, SPI Bus, 128 Taps, Wiper Only]
分类和应用: 电位器
文件页数/大小: 13 页 / 365 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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ISL22419
Operating Specifications
Over the recommended operating conditions unless otherwise specified.
SYMBOL
I
CC1
PARAMETER
V
CC
Supply Current (volatile
write/read)
V
CC
Supply Current (volatile
write/read)
I
CC2
V
CC
Supply Current ( non-volatile
write/read)
V
CC
Supply Current ( non-volatile
write/read)
I
SB
V
CC
Current (standby)
TEST CONDITIONS
10k DCP, f
SPI
= 5MHz; (for SPI active, read
and write states)
50k DCP, f
SPI
= 5MHz; (for SPI active, read
and write states)
10k DCP, f
SPI
= 5MHz; (for SPI active, read
and write states)
50k DCP, f
SPI
= 5MHz; (for SPI active, read
and write states)
V
CC
= +5.5V, 10k DCP, SPI interface in
standby state
V
CC
= +5.5V, 50k DCP, SPI interface in
standby state
V
CC
= +3.6V, 10k DCP, SPI interface in
standby state
V
CC
= +3.6V, 50k DCP, SPI interface in
standby state
I
SD
V
CC
Current (shutdown)
V
CC
= +5.5V @ +85°C, SPI interface in
standby state
V
CC
= +5.5V@ +125°C, SPI interface in
standby state
V
CC
= +3.6V @ +85°C, SPI interface in
standby state
V
CC
= +3.6V @ +125°C, SPI interface in
standby state
I
LkgDig
t
WRT
(Note 14)
t
ShdnRec
(Note 14)
Leakage Current, at Pins SHDN, SCK, Voltage at pin from GND to V
CC
SDI, SDO and CS
Wiper Response Time
DCP Recall Time from Shutdown
Mode
Wiper Response Time after SPI write to WR
register
From rising edge of SHDN signal to wiper
stored position and RH connection
SCK rising edge of last bit of ACR data byte
to wiper stored position and RH connection
Vpor
V
CC
Ramp
t
D
Power-on Recall Voltage
V
CC
Ramp Rate
Power-up Delay
V
CC
above Vpor, to DCP Initial Value
Register recall completed, and SPI Interface
in standby state
Minimum V
CC
at which memory recall occurs
2.0
0.2
3
-1
1.5
1.5
1.5
2.6
MIN
TYP
(NOTE 5)
MAX
1
0.5
3.2
2.7
850
160
550
100
3
5
2
4
1
UNIT
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µs
µs
µs
V
V/ms
ms
EEPROM SPECIFICATION
EEPROM Endurance
EEPROM Retention
t
WC
(Note 12)
Non-volatile Write Cycle Time
Temperature T
55
°C
From rising edge of CS
1,000,000
50
12
20
Cycles
Years
ms
SERIAL INTERFACE SPECIFICATIONS
V
IL
V
IH
SHDN, SCK, SDI, and CS Input Buffer
LOW Voltage
SHDN, SCK, SDI, and CS Input Buffer
HIGH Voltage
-0.3
0.7*V
CC
0.3*V
CC
V
CC
+0.3
V
V
4
FN6311.0
June 28, 2006