HM-65162
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to V
CC
+0.3V
Typical Derating Factor . . . . . . . . . . 05mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance
θ
JA
(
o
C/W)
θ
JC
(
o
C/W)
CERDIP Package . . . . . . . . . . . . . . . .
48
8
CLCC Package . . . . . . . . . . . . . . . . . .
66
12
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300
o
C
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-65162S-9, HM-65162B-9,
HM-65162-9, HM65162C-9. . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26000 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V
CC
= 5V
±10%;
T
A
= -40
o
C to +85
o
C (HM-65162S-9, HM-65162B-9, HM-65162-9, HM-65162C-9)
LIMITS
SYMBOL
ICCSB1
PARAMETER
Standby Supply Current
MIN
-
-
MAX
50
100
UNITS
µA
µA
TEST CONDITIONS
HM-65162B-9, IO = 0mA,
E = V
CC
- 0.3V, V
CC
= 5.5V
HM-65162S-9, HM65162-9,
IO = 0mA, E = V
CC
- 0.3V,
V
CC
= 5.5V
HM-65162C-9, IO = 0mA,
E = V
CC
- 0.3V, V
CC
= 5.5V
E = 2.2V, IO = 0mA, V
CC
= 5.5V
E = 0.8V, IO = 0mA, V
CC
= 5.5V
E = 0.8V, IO = 0mA, f = 1MHz,
V
CC
= 5.5V
HM-65162B-9, IO = 0mA,
V
CC
= 2.0V, E = VCC - 0.3V
HM-65162S-9, HM-65162-9,
IO = 0mA, V
CC
= 2.0V,
E = V
CC
- 0.3V
HM-65162C-9, IO = 0mA,
V
CC
= 2.0V, E = V
CC
- 0.3V
VI = V
CC
or GND, V
CC
= 5.5V
VIO = V
CC
or GND, V
CC
= 5.5V
V
CC
= 4.5V
V
CC
= 5.5V
IO = 4.0mA, V
CC
= 4.5V
IO = -1.0mA, V
CC
= 4.5V
IO = -100µA, V
CC
= 4.5V
-
ICCSB
ICCEN
ICCOP
ICCDR
Standby Supply Current
Enabled Supply Current
Operating Supply Current (Note 1)
Data Retention Supply Current
-
-
-
-
-
900
8
70
70
20
40
µA
mA
mA
mA
µA
µA
-
VCCDR
II
IIOZ
V
IL
V
IH
VOL
VOH1
VOH2
Data Retention Supply Voltage
Input Leakage Current
Input/Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage (Note 2)
2.0
-1.0
-1.0
-0.3
2.2
-
2.4
V
CC
-0.4
300
-
+1.0
+1.0
0.8
V
CC
+0.3
0.4
-
-
µA
V
µA
µA
V
V
V
V
V
Capacitance
T
A
= +25
o
C
SYMBOL
CI
CIO
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
PARAMETER
Input Capacitance (Note 2)
Input/Output Capacitance (Note 2)
MAX
10
12
UNITS
pF
pF
TEST CONDITIONS
f = 1MHz, All measurements are
referenced to device GND
3
INTERSIL [ INTERSIL CORPORATION ]
