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SMPJ309 参数 Datasheet PDF下载

SMPJ309图片预览
型号: SMPJ309
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236]
分类和应用: 放大器光电二极管晶体管
文件页数/大小: 1 页 / 93 K
品牌: INTERFET [ INTERFET CORPORATION ]
   
01/99
B-61
J308, J309
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixers
¥ Oscillators
¥ VHF/UHF Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
10 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward Transconductance
J308
Min
V
(BR)GSS
I
GSS
V
GS(OFF)
V
GS(F)
I
DSS
12
–1
– 25
–1
–1
– 6.5
1
60
12
–1
Typ
Max
Min
– 25
J309
Typ
Max
Unit
V
–1
–1
–4
1
30
nA
µA
V
V
mA
Process NJ72
Test Conditions
I
G
= – 1µA, V
DS
= ØV
V
GS
= – 15V, V
V
GS
= – 15V, V
DS
= ØV
V
DS
= 10V, I
D
= 1 nA
V
DS
= ØV, I
G
= 1 mA
V
DS
= 10V, V
GS
= ØV
T
A
= +125°C
g
fs
g
os
g
fg
g
og
C
dg
C
gs
e
N
¯
Re
(Yfs)
Re
(Yig)
Re
(Yis)
Re
(Gos)
G
pg
NF
8000 17000
250
13000
150
1.8
4
10
12
14
0.4
0.15
16
11
1.5
2.7
2.5
5
10000 17000
250
13000
100
1.8
4
10
12
14
0.4
0.15
16
11
1.5
2.7
2.5
5
µS
µS
µS
µS
pF
pF
nV/√Hz
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 15V, I
D
= 10 mA
V
DS
= 15V, I
D
= 10 mA
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 100 kHz
f = 105 MHz
f = 105 MHz
f = 105 MHz
f = 105 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
Common Source Output Conductance
Common Gate Forward Transconductance
Common Gate Output Transconductance
Gate Drain Capacitance
Gate Source Capacitance
Equivalent Short Circuit
Input Noise Voltage
Common Source Forward
Transconductance
Common Gate Input Conductance
Common Source Input Conductance
Common Source Output Conductance
Common Gate Power Gain
at Noise Match
Noise Figure
µS
µS
µS
µS
dB
dB
dB
dB
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ308, SMPJ309
Pin Configuration
1 Drain, 2 Source, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com